sputter deposition meaning in Chinese
溅射淀积
Examples
- Research of some typical problems in sputtering deposition
溅射成膜中几个问题的探讨 - This thesis detailedly discussed die preparation of zrn films with microware - ecr plasma enhanced magnetron sputtering deposition ( mw - ecrpemsd ) technology
本文探讨了制备zrn薄膜的微波- ecr等离子体增强非平衡磁控溅射沉积工艺。 - For vlsi , a plane surface may be approximated by depositing the interlevel dielectric by bias - sputter deposition ( see section 9 . 2 . 4 ) or by using planarization
对于超大规模集成电路的平面状表面，可以用偏置溅射淀积法的层间介质淀积（见9 2 4节）或用平面化工艺来近似获得。 - Bidirectional diffusion between silicon and tini thin film has been exhibited in eds linescan curves , along with mapping distribution micrographs . moreover , a ternary titanium nickel silicide - nisti2si , is formed during sputtering deposition , which is determined by xrd analysis
大量试验表明：配比为35nil ： 27inl ： 118rnl的hfgyo3a12o腐蚀系统对twi薄膜具有较快的腐蚀速率，而且对8的腐蚀不明显，因而适合于硅基tini形状记忆薄膜的湿法腐蚀。 - Centering at soft x - ray multilayer uniformity technology , we introduce general situation of multilayer , design of multilayer structure , simulation calculation , ion - beam sputtering deposition and evaluation of samples . above all , we carry out study of improving uniformity of period thickness spatial distribution , and develop correction mask for controlling period thickness . as a result , we improve uniformity from 4 . 5 % to 2 . 0 % , the error of period thickness on ( 130nm field is controlled within 0 . 18nm , and the reflectivity reach 35 % at center wavelength 17 . 1nm
特别地，我们设计并应用膜厚挡板补偿技术控制多层膜的膜厚分布，将膜厚分布非均匀性从4 . 5减小到2 ，周期厚度绝对差值控制在0 . 18nm以内，并且制备得实际多层膜样品在中心波长17 . 1nm处实测反射率达到35 ,达到实用水平。